| 題目：高速發光電晶體與電晶體雷射—下一代光通訊聯結和光電積體整合電路之應用 (High-Speed Light-Emitting Transistors and Transistor Lasers for Next-generation Optical Interconnects and Photonic Integrated Circuits) 主講人：吳肇欣助理教授(台灣大學電機系) 時間：102年10月23日(星期三13:30-15:30) 地點：三峽校區文學院文1F11教室 摘要： Integrated microelectronics and optoelectronics will be the key enabling technologies for future high performance applications such as wireless, satellite and radar communication systems, supercomputing and ultra large-scale data-warehousing applications. However, high performance integrated micro-optoelectronics solutions are presently limited by the lack of a fundamental building block, or in the language of electronics, a “transistor equivalent.” In this talk, the devices physics and its high-speed electrical and optical characteristics of light-emitting transistors and transistor lasers will be presented, offering the promise of integration and unprecedented size, weight and cost reduction. The III-V transistor-laser photonics shows great potential for next-generation photonic integrated circuits and optical interconnects. Biography: Chao-Hsin Wu received the B.S. degree in Electrical Engineering (EE) and the M.S. degree in Graduate Institute of Photonics and Optoelectronics (GIPO) from National Taiwan University (NTU), Taipei, Taiwan, and the Ph.D. degree in Electrical and Computer Engineering from University of Illinois at Urbana-Champaign. In Illinois, he pioneered the development of novel III-V high-speed microelectronics and optoelectronics devices, including InGaN/GaN heterojunction bipolar transistors, InGaP/GaAs power amplifiers, and microcavity lasers. His research mainly focuses on the three-terminal light-emitting transistors (LETs) and transistor lasers (TLs). He has demonstrated the world-record optical spontaneous modulation bandwidth of 7 GHz (corresponding to a recombination lifetime of 23 ps), which is a breakthrough in semiconductor device technology history for the past 50 years. 敬邀參加~ |
